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2019
Amato, M., Ossicini, S., Canadell, E. & Rurali, R. Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano letters (2019).doi:10.1021/acs.nanolett.8b04083
2018
Marri, I., Amato, M., Guerra, R. & Ossicini, S. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications. Physica Status Solidi B-Basic Solid State Physics 255, (2018).
2017
Kaewmaraya, T., Vincent, L. & Amato, M. Accurate Estimation of Band Offsets in Group IV Polytype Junctions: A First-Principles Study. Journal of Physical Chemistry C 121, 5820-5828 (2017).
Bertocchi, M., Amato, M., Marri, I. & Ossicini, S. Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study. Physica Status Solidi C: Current Topics in Solid State Physics, Vol 14 No 12 14, (2017).
2016
Amato, M., Kaewmaraya, T., Zobelli, A., Palummo, M. & Rurali, R. Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions. Nano Letters 16, 5694–5700 (2016).
Amato, M. & Rurali, R. Surface physics of semiconducting nanowires. Progress in Surface Science 91, 1-28 (2016).
Amato, M., Bertocchi, M. & Ossicini, S. Work function bowing in Si1-xGex heterostructures: Ab initio results. Journal of Applied Physics 119, (2016).
2015
2014
Falke, S.M., et al. Coherent ultrafast charge transfer in an organic photovoltaic blend. Science 344, 1001-1005 (2014).
Amato, M., Palummo, M., Rurali, R. & Ossicini, S. Silicon-Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications. Chemical Reviews 114, 1371-1412 (2014).
Amato, M., Rurali, R., Palummo, M. & Ossicini, S. Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires. Journal of Physics D-Applied Physics 47, (2014).
2013
Valitova, I., et al. Carbon nanotube electrodes in organic transistors. Nanoscale 5, 4638-4646 (2013).
2012
Amato, M., Palummo, M. & Ossicini, S. Band structure analysis in SiGe nanowires. Materials Science and Engineering B-Advanced Functional Solid-State Materials 177, 705-711 (2012).
Amato, M., Rurali, R. & Ossicini, S. Doping of SiGe core-shell nanowires. Journal of Computational Electronics 11, 272-279 (2012).
Amato, M., Ossicini, S. & Rurali, R. Electron Transport in SiGe Alloy Nanowires in the Ballistic Regime from First-Principles. Nano Letters 12, 2717-2721 (2012).
Amato, M., Palummo, M., Rurali, R. & Ossicini, S. Optical absorption modulation by selective codoping of SiGe core-shell nanowires. Journal of Applied Physics 112, (2012).
2011
Amato, M., Ossicini, S. & Rurali, R. Band-Offset Driven Efficiency of the Doping of SiGe Core-Shell Nanowires. Nano Letters 11, 594-598 (2011).
2010
Palummo, M., Amato, M. & Ossicini, S. Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects. Physical Review B 82, (2010).
Amato, M., Palummo, M. & Ossicini, S. Segregation, quantum confinement effect and band offset for 110 SiGe NWs. Physica Status Solidi B-Basic Solid State Physics 247, 2096-2101 (2010).
Ossicini, S., Amato, M., Guerra, R., Palummo, M. & Pulci, O. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results. Nanoscale Research Letters 5, 1637-1649 (2010).
2009
Amato, M., Palummo, M. & Ossicini, S. Reduced quantum confinement effect and electron-hole separation in SiGe nanowires. Physical Review B 79, (2009).
Amato, M., Palummo, M. & Ossicini, S. SiGe nanowires: Structural stability, quantum confinement, and electronic properties. Physical Review B 80, (2009).